Title :
Aftereffects in IMPATT oscillators with transient ionizing radiation
Author :
Borrego, J.M. ; Gutmann, R.J. ; Cottrell, P.E. ; Ghandhi, S.K.
Author_Institution :
Rensselaer Polytechnic Institute, Troy, N. Y.
fDate :
5/1/1973 12:00:00 AM
Abstract :
Two types of aftereffects were observed in testing IMPATT diodes under ionizing radiation. The first type can be characterized by a 10-25-percent decrease in power and a 5-20-MHz change in oscillation frequency after the radiation pulse. The second type is characterized by a large change in oscillator performance (3-dB decrease in power and 1-GHz change in frequency) or irreversible diode failure, and occurred with two GaAs Schottky diodes. A strong cavity-RF load dependence has been demonstrated for the latter type of aftereffect.
Keywords :
Force measurement; Gallium arsenide; Ionizing radiation; Leakage current; Oscillators; Radio frequency; Schottky diodes; Semiconductor diodes; Silicon; Testing;
Journal_Title :
Proceedings of the IEEE
DOI :
10.1109/PROC.1973.9134
