• DocumentCode
    926899
  • Title

    Performance of Deep Ultraviolet GaN Avalanche Photodiodes Grown by MOCVD

  • Author

    Shen, Shyh-Chiang ; Zhang, Yun ; Yoo, Dongwon ; Limb, Jae-Boum ; Ryou, Jae-Hyun ; Yoder, Paul D. ; Dupuis, Russell D.

  • Author_Institution
    Georgia Inst. of Technol., Atlanta
  • Volume
    19
  • Issue
    21
  • fYear
    2007
  • Firstpage
    1744
  • Lastpage
    1746
  • Abstract
    We report high-performance GaN ultraviolet (UV) p-i-n avalanche photodiodes (APDs) fabricated on bulk GaN substrates. The fabricated GaN p-i-n diodes demonstrated optical gains > 104 and low dark current densities operating at wavelengths from 280 to 360 nm. The result is among the highest III-N-based APD gains at the deep UV wavelength of 280 nm reported to date.
  • Keywords
    III-V semiconductors; MOCVD coatings; avalanche photodiodes; current density; gallium compounds; p-i-n photodiodes; photodetectors; semiconductor growth; wide band gap semiconductors; GaN; MOCVD; current densities; deep ultraviolet p-i-n avalanche photodiodes; semiconductor growth; wavelength 280 nm to 360 nm; Absorption; Avalanche photodiodes; Dark current; Fabrication; Gallium nitride; MOCVD; P-i-n diodes; Photodetectors; Sensor arrays; Substrates; Avalanche photodiode (APD); GaN; PIN; deep ultraviolet (DUV);
  • fLanguage
    English
  • Journal_Title
    Photonics Technology Letters, IEEE
  • Publisher
    ieee
  • ISSN
    1041-1135
  • Type

    jour

  • DOI
    10.1109/LPT.2007.906052
  • Filename
    4346597
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=926899