DocumentCode
926971
Title
Reliability of Power Gaas FET´s-Au Gates and Al-Au Linked Gates
Author
Cohen, Eliot D. ; Macpherson, Alan C. ; Christou, Aristos
Volume
29
Issue
7
fYear
1981
fDate
7/1/1981 12:00:00 AM
Firstpage
636
Lastpage
642
Abstract
An investigation of the reliability of two types of commercial microwave power GaAs FET\´s has been carried out. Mean-time-to-failure data for a device mounted face-up with Al gates but without an Al-Au couple is presented and similar data for a "flip-chip" mounted Au-refractory gate device is reviewed. The failure mechanisms for both devices are described.
Keywords
Failure analysis; Gallium arsenide; Gold; Laboratories; Packaging; Radio frequency; Substrates; Temperature; Testing; Voltage;
fLanguage
English
Journal_Title
Microwave Theory and Techniques, IEEE Transactions on
Publisher
ieee
ISSN
0018-9480
Type
jour
DOI
10.1109/TMTT.1981.1130422
Filename
1130422
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