Title :
Low-temperature fabrication of amorphous BaTiO/sub 3/ thin-film bypass capacitors
Author :
Liu, W.-T. ; Cochrane, S. ; Lakshmikumar, S.T. ; Knorr, D.B. ; Rymaszewski, Eugene J. ; Borrego, J.M. ; Lu, T.-M.
Author_Institution :
Rensselaer Polytech. Inst., Troy, NY, USA
fDate :
7/1/1993 12:00:00 AM
Abstract :
Amorphous BaTiO/sub 3/ thin-film capacitors suitable for integration into a multichip module packaging process were fabricated. The multilayer capacitor structure consisted of an adhesion layer (TiO/sub x/N/sub y/ or Ti), a bottom electrode (Cu), a dielectric (amorphous BaTiO/sub 3/), and a top electrode (Cu). A 3000-AA amorphous BaTiO/sub 3/ film was deposited onto the electrode by the reactive partially ionized beam (RPIB) technique at near room temperature. After a 300 degrees C postdeposition anneal, the capacitors had the following properties: epsilon /sub r/=17-18 and tan delta <0.01 up to 600 MHz, J/sub leak/=0.06-0.5 mu A/cm/sup 2/ at 0.5 MV/cm, and breakdown field E/sub max/=3.3 MV/cm.<>
Keywords :
annealing; barium compounds; multichip modules; sputter deposition; thin film capacitors; 1 to 600 MHz; 300 C; 3000 angstroms; Ti adhesion layer; Ti/sub x/N/sub y/-Cu-BaTiO/sub 3/-Cu capacitor; amorphous thin film bypass capacitors; breakdown field; low temperature fabrication; multichip module packaging process; multilayer capacitor structure; postdeposition annealing; reactive partially ionised beam technique; Adhesives; Amorphous materials; Capacitors; Dielectric thin films; Electrodes; Fabrication; Ion beams; Multichip modules; Nonhomogeneous media; Packaging;
Journal_Title :
Electron Device Letters, IEEE
