Title :
Semi-insulating properties of Fe-doped InP
Author :
Mizuno, Osamu ; Watanabe, Hisao
Author_Institution :
Nippon Electric Co. Ltd., Central Research Laboratories, Kawasaki, Japan
Abstract :
Semi-insulating InP having a room-temperature resistivity of greater than 107 ¿cm was prepared by Fe doping. The current/voltage characteristic of the material changed from ohmic to V2 dependent at about 104 V/cm. Temperature dependence of the resistivity gave an activation energy of 0.66 eV. The Hall effect was negative, and the observed electron concentration was about 109 cm¿3.
Keywords :
Hall effect; III-V semiconductors; carrier density; electrical conductivity of solid semiconductors and insulators; indium compounds; iron; activation energy; electron concentration; negative Hall effect; resistivity; semiinsulating InP:Fe;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19750089
