High-speed Al/sub 0.2/Ga/sub 0.8/As/GaAs multi-quantum-well phototransistors with tunable spectral response

Author

Li, W.Q. ; Karakucuk, M. ; Freeman, P.N. ; East, J.R. ; Haddad, G.I. ; Bhattacharya, Pallab K.

Author_Institution

Dept. of Electr. Eng., Michigan Univ., Ann Arbor, MI, USA

Volume

14

Issue

7

fYear

1993

fDate

7/1/1993 12:00:00 AM

Firstpage

335

Lastpage

337

Abstract

The authors have measured the high-frequency characteristics and temporal response of a GaAs/AlGaAs heterojunction phototransistor with a GaAs/Al/sub 0.2/Ga/sub 0.8 /multi-quantum-well collector. The quantum wells offer tunability of the photoresponse (10 nm for a bias change of 4 V) and a negative differential resistance in the photocurrent-voltage characteristics. Measured values of f/sub T/ and f/sub max/ are 20 and 6 GHz, respectively. The temporal response to short-pulse optical excitation is characterized by a linewidth of 46 ps. Such devices are attractive candidates for making optically induced oscillators.<>

Keywords

III-V semiconductors; aluminium compounds; gallium arsenide; negative resistance; photodetectors; phototransistors; semiconductor quantum wells; 20 GHz; 6 GHz; Al/sub 0.2/Ga/sub 0.8/As-GaAs heterojunction phototransistor; high-frequency characteristics; multiquantum well phototransistor; negative differential resistance; optically induced oscillators; photocurrent-voltage characteristics; semiconductor; short-pulse optical excitation; temporal response; tunable spectral response; Electrical resistance measurement; Gallium arsenide; Heterojunctions; High speed optical techniques; Optical devices; Oscillators; Phototransistors;

fLanguage

English

Journal_Title

Electron Device Letters, IEEE

Publisher

ieee

ISSN

0741-3106

Type

jour

DOI

10.1109/55.225565

Filename

225565