DocumentCode :
927097
Title :
New physical formulation of the thermionic emission current at the heterojunction interface
Author :
Chang, Kow-Ming ; Tsai, Jung-Yu ; Chang, Chun-Yen
Author_Institution :
Dept. of Electron. Eng., Nat. Chiao Tung Univ., Hsinchu, Taiwan
Volume :
14
Issue :
7
fYear :
1993
fDate :
7/1/1993 12:00:00 AM
Firstpage :
338
Lastpage :
341
Abstract :
The thermionic emission current for electrons across the heterojunction interface is classically modeled as the difference between two opposing electron fluxes. A new, consistent, physical model, which includes the carrier degeneracy and nonideal behavior effects, is presented. It is shown that the emission current at the interface can be expressed in a simple closed-form formalism that gives the relationships among the average directional thermal velocity of electrons, the conduction band discontinuity, and the carrier activities at both sides of the interface. The conditions under which the thermionic emission occurs at the heterointerface are discussed.<>
Keywords :
III-V semiconductors; aluminium compounds; conduction bands; gallium arsenide; p-n heterojunctions; thermionic electron emission; GaAlAs-GaAs heterojunction; average directional thermal velocity of electrons; carrier activities; carrier degeneracy; classical modelling; closed-form formalism; conduction band discontinuity; electron fluxes; heterojunction interface; nonideal behavior effects; p-n heterojunction; physical model; thermionic emission current; Electron emission; Heterojunctions; Thermal conductivity; Thermionic emission;
fLanguage :
English
Journal_Title :
Electron Device Letters, IEEE
Publisher :
ieee
ISSN :
0741-3106
Type :
jour
DOI :
10.1109/55.225566
Filename :
225566
Link To Document :
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