Title :
Determination of Si/SiO/sub 2/ interface roughness using weak localization
Author :
Anderson, Warren R. ; Lombardi, D.R. ; Wheeler, R.G. ; Ma, Tso-Ping
Author_Institution :
Yale Univ., New Haven, CT, USA
fDate :
7/1/1993 12:00:00 AM
Abstract :
The interface roughness of intentionally textured Si/SiO/sub 2/ interfaces was measured using the quantum weak localization (WL) correction to the electrical conductivity at low temperatures. The deduced roughness was confirmed by observation of the Si surface replicas by atomic force microscopy (AFM). Quantitative agreement between the two methods was found ( Delta =1.2 to 1.4 AA from WL and 1.35 AA from AFM). For a surface with artificially induced texture, it is found that WL can easily distinguish a significant increase in roughness relative to the smooth surfaces. AFM confirms this qualitative conclusion.<>
Keywords :
atomic force microscopy; elemental semiconductors; insulated gate field effect transistors; interface structure; quantum interference phenomena; semiconductor-insulator boundaries; silicon compounds; surface texture; AFM; Si surface replicas; Si-SiO/sub 2/ interface texture; artificially induced texture; atomic force microscopy; electrical conductivity; interface roughness; n-channel Hall-bar MOSFET; quantum weak localisation correction; semiconductor; Atomic force microscopy; Atomic measurements; Conductivity measurement; Electric variables measurement; Rough surfaces; Surface roughness; Surface texture; Temperature;
Journal_Title :
Electron Device Letters, IEEE
