Title :
High-frequency silicon-on-sapphire IMPATT oscillator
Author :
Wen, C.P. ; Chiang, Y.S. ; Young, A.F.
Author_Institution :
RCA Corporation, Princeton, N.J.
fDate :
6/1/1973 12:00:00 AM
Abstract :
Epitaxially grown silicon-on-sapphire (SOS) monolithic integrated IMPATT oscillators were fabricated and tested. One diode was successfully operated under pulsed conditions yielding 10-mW peak power output at 13.8 GHz. This experiment serves to demonstrate the feasibility of silicon-on-sapphire monolithic integration at microwave frequencies.
Keywords :
Charge carrier density; Charge carrier processes; Electrodes; Electromagnetic heating; MMICs; Microwave devices; Microwave integrated circuits; Microwave oscillators; Monolithic integrated circuits; Semiconductor diodes;
Journal_Title :
Proceedings of the IEEE
DOI :
10.1109/PROC.1973.9161
