Title :
High-frequency InP/InGaAs double heterojunction bipolar transistors on Si substrate
Author :
Matsuoka, Yutaka ; Kurishima, Kenji ; Makimoto, Toshiki
Author_Institution :
NTT LSI Labs., Kanagawa, Japan
fDate :
7/1/1993 12:00:00 AM
Abstract :
Self-aligned high-frequency InP/InGaAs double heterojunction bipolar transistors (DHBTs) have been fabricated on a Si substrate. A current gain of 40 was obtained for a DHBT with an emitter dimension of 1.6 mu m*19 mu m. The S parameters were measured for various bias points. In the case of I/sub C/=15 mA, f/sub T/ was 59 GHz at V/sub CE/=1.8 V, and f/sub max/ was 69 GHz at V/sub CE/=2.3 V. Due to the InP collector, breakdown voltage was so high that a V/sub CE/ of 3.8 V was applied for I/sub C/=7.5 mA in the S-parameter measurements to give an f/sub T/ of 39 GHz and an f/sub max/ of 52 GHz.<>
Keywords :
III-V semiconductors; S-parameters; electric breakdown; gallium arsenide; heterojunction bipolar transistors; indium compounds; solid-state microwave devices; 1.8 V; 15 mA; 2.3 V; 3.8 V; 39 GHz; 52 GHz; 59 GHz; 69 GHz; 7.5 mA; DHBT; InP-InGaAs transistors; S parameters; Si substrate; breakdown voltage; current gain; double heterojunction bipolar transistors; emitter dimension; self aligned high frequency transistor; semiconductor; Double heterojunction bipolar transistors; Indium gallium arsenide; Indium phosphide;
Journal_Title :
Electron Device Letters, IEEE
