DocumentCode
927206
Title
The honeycomb-shape capacitor structure for ULSI DRAM
Author
Yu, Sanggi ; Chun, Kukjin ; Lee, Jong Duk
Author_Institution
Dept. of Electron. Eng., Seoul Nat. Univ., South Korea
Volume
14
Issue
8
fYear
1993
Firstpage
369
Lastpage
371
Abstract
A way to increase the charge stored in polysilicon capacitors using surface modulation technology is proposed. Asperities on the polysilicon surface are achieved by reactive ion etching (RIE) of the polysilicon, using the oxide at the grain boundary as a mask. The fabricated polysilicon electrode has a honeycomb shape. With this structure, the capacitance is increased by four times for a polysilicon storage electrode of 250-nm thickness. The leakage current is comparable to that of convection stacked capacitors (STCs).<>
Keywords
DRAM chips; MOS integrated circuits; VLSI; capacitors; elemental semiconductors; leakage currents; silicon; sputter etching; surface treatment; 250 nm; RIE; Si; ULSI DRAM; honeycomb-shape capacitor structure; leakage current; polysilicon electrode; reactive ion etching; surface modulation technology; Capacitance; Capacitors; Electrodes; Etching; Fabrication; Grain boundaries; Oxidation; Random access memory; Semiconductor device doping; Ultra large scale integration;
fLanguage
English
Journal_Title
Electron Device Letters, IEEE
Publisher
ieee
ISSN
0741-3106
Type
jour
DOI
10.1109/55.225582
Filename
225582
Link To Document