DocumentCode
927220
Title
A Large-Signal Model for the GaAs MESFET
Author
Madjar, Asher ; Rosenbaum, Fred J.
Volume
29
Issue
8
fYear
1981
fDate
8/1/1981 12:00:00 AM
Firstpage
781
Lastpage
788
Abstract
An analytic Iarge-signal model for the GaAs FET is described which relates the terminal currents to the instantaneous terminal voltages and their time derivatives. It incorporates the device geometry and semiconductor parameters as well as the device parasitic circuit elements. The model is fast and efficient when implemented on a computer and is in a form suitable for large-signal circuit design and optimization.
Keywords
Circuits; Distortion measurement; Gallium arsenide; Geometry; MESFETs; Microwave FETs; Microwave theory and techniques; Nonlinear distortion; Pulse amplifiers; Voltage;
fLanguage
English
Journal_Title
Microwave Theory and Techniques, IEEE Transactions on
Publisher
ieee
ISSN
0018-9480
Type
jour
DOI
10.1109/TMTT.1981.1130447
Filename
1130447
Link To Document