Title :
A Large-Signal Model for the GaAs MESFET
Author :
Madjar, Asher ; Rosenbaum, Fred J.
fDate :
8/1/1981 12:00:00 AM
Abstract :
An analytic Iarge-signal model for the GaAs FET is described which relates the terminal currents to the instantaneous terminal voltages and their time derivatives. It incorporates the device geometry and semiconductor parameters as well as the device parasitic circuit elements. The model is fast and efficient when implemented on a computer and is in a form suitable for large-signal circuit design and optimization.
Keywords :
Circuits; Distortion measurement; Gallium arsenide; Geometry; MESFETs; Microwave FETs; Microwave theory and techniques; Nonlinear distortion; Pulse amplifiers; Voltage;
Journal_Title :
Microwave Theory and Techniques, IEEE Transactions on
DOI :
10.1109/TMTT.1981.1130447
