Title :
Tunnel oxide prepared by thermal oxidation of thin polysilicon film on silicon (TOPS)
Author :
Wu, Shye Lin ; Lee, Chung Len ; Lei, Tan Fu
Author_Institution :
Dept. of Electron. Eng., Nat. Chiao-Tung Univ., Hsinchu, Taiwan
Abstract :
A textured tunnel oxide, TOPS, prepared by thermally oxidizing a thin polysilicon film on a Si substrate is reported. Due to the rapid diffusion of oxygen through the grain boundaries of the thin polysilicon into Si substrate and the enhanced oxidation rate at the grain boundaries, a textured Si-SiO/sub 2/ interface is obtained. The textured interface results in localized high fields and enhances electron injection into TOPS. TOPS exhibits a higher electron injection efficiency, a better immunity to the electron trapping and interface state generation under high-field operation, and a higher asymmetric injection polarity than the normal oxide.<>
Keywords :
electron traps; elemental semiconductors; grain boundaries; high field effects; interface electron states; oxidation; semiconductor-insulator boundaries; silicon; surface texture; tunnelling; Si substrate; asymmetric injection polarity; electron injection; electron trapping; enhanced oxidation rate; grain boundaries; high-field operation; interface state generation; localized high fields; textured Si-SiO/sub 2/ interface; thermal oxidation; thin polysilicon film; Dielectric substrates; Electron traps; Grain boundaries; Interface states; MOS capacitors; Oxidation; Semiconductor films; Silicon; Temperature; Thermal stresses;
Journal_Title :
Electron Device Letters, IEEE
