Title :
A novel amorphous silicon doping superlattice device with double switching characteristics for multiple-valued logic applications
Author :
Liu, C.R. ; Fang, Y.K. ; Hwang, J.D. ; Chen, K.H.
Author_Institution :
Dept. of Electr. Eng., Nat. Cheng Kung Univ., Tainan, Taiwan
Abstract :
An amorphous silicon doping superlattice device with different period lengths is developed, providing a double switching characteristic that has been demonstrated to yield multiple stable states for multiple-valued logic applications. Unlike those of conventional switching devices, the switching characteristics of the present device are caused by avalanche multiplication and a barrier-lowering effect. A tristate memory cell using this device is proposed and discussed.<>
Keywords :
amorphous semiconductors; elemental semiconductors; hydrogen; impact ionisation; many-valued logics; semiconductor storage; semiconductor superlattices; semiconductor switches; silicon; Si:H; avalanche multiplication; barrier-lowering effect; double switching characteristics; multiple stable states; multiple-valued logic applications; n-i-p-i structure; tristate memory cell; Amorphous silicon; Character generation; Doping; Electrodes; Gold; Logic circuits; Logic devices; Plasma temperature; Superlattices; Switching circuits;
Journal_Title :
Electron Device Letters, IEEE
