A novel amorphous silicon doping superlattice device with double switching characteristics for multiple-valued logic applications

Author

Liu, C.R. ; Fang, Y.K. ; Hwang, J.D. ; Chen, K.H.

Author_Institution

Dept. of Electr. Eng., Nat. Cheng Kung Univ., Tainan, Taiwan

Volume

14

Issue

8

fYear

1993

Firstpage

391

Lastpage

393

Abstract

An amorphous silicon doping superlattice device with different period lengths is developed, providing a double switching characteristic that has been demonstrated to yield multiple stable states for multiple-valued logic applications. Unlike those of conventional switching devices, the switching characteristics of the present device are caused by avalanche multiplication and a barrier-lowering effect. A tristate memory cell using this device is proposed and discussed.<>

Keywords

amorphous semiconductors; elemental semiconductors; hydrogen; impact ionisation; many-valued logics; semiconductor storage; semiconductor superlattices; semiconductor switches; silicon; Si:H; avalanche multiplication; barrier-lowering effect; double switching characteristics; multiple stable states; multiple-valued logic applications; n-i-p-i structure; tristate memory cell; Amorphous silicon; Character generation; Doping; Electrodes; Gold; Logic circuits; Logic devices; Plasma temperature; Superlattices; Switching circuits;

fLanguage

English

Journal_Title

Electron Device Letters, IEEE

Publisher

ieee

ISSN

0741-3106

Type

jour

DOI

10.1109/55.225589

Filename

225589