Title :
Output-resistance properties of the GaAs Schottky-gate field-effect transistor in saturation
Author :
Rossel, P. ; Cabot, J.J.
Author_Institution :
Laboratoire d´Automatique et d´Analyse des Systÿmes, Centre National de la Recherche Scientifique, Toulouse, France
Abstract :
Some new experimentally observed properties of the output resistance of GaAs Schottky-gate f.e.t.s in saturation are described. A phenomenological model is proposed in which the structure is divided into two sections: a source section, where the approximation is assumed to be gradual, and a drain section, where the drain current is included in the `equivalent doping¿. At high drain currents, the experimental results are found to correspond well with the theory.
Keywords :
field effect transistors; GaAs Schottky gate FET; drain section; equivalent doping; output resistance; phenomenological model; saturation; source section;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19750115
