Output-resistance properties of the GaAs Schottky-gate field-effect transistor in saturation

Some new experimentally observed properties of the output resistance of GaAs Schottky-gate f.e.t.s in saturation are described. A phenomenological model is proposed in which the structure is divided into two sections: a source section, where the approximation is assumed to be gradual, and a drain section, where the drain current is included in the `equivalent doping¿. At high drain currents, the experimental results are found to correspond well with the theory.