DocumentCode
927370
Title
V-shaped-gate GaAs m.e.s.f.e.t. for improved high-frequency performance
Author
Kohn, Erhard
Author_Institution
RWTH Aachen, Institut fÿr Halbleitertechnik, Aachen, West Germany
Volume
11
Issue
8
fYear
1975
Firstpage
160
Lastpage
160
Abstract
The idea of gate shaping in f.e.t.s was implemented into the GaAs-m.e.s.f.e.t. structure. A m.e.s.f.e.t. with 2 ¿m gate length was fabricated, the measured m.a.g. data of which allow an extrapolation to an fmax of about 45 GHz.
Keywords
field effect transistors; 45 GHz; GaAs MESFET; V-shaped gate;
fLanguage
English
Journal_Title
Electronics Letters
Publisher
iet
ISSN
0013-5194
Type
jour
DOI
10.1049/el:19750122
Filename
4236635
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