Title :
V-shaped-gate GaAs m.e.s.f.e.t. for improved high-frequency performance
Author_Institution :
RWTH Aachen, Institut fÿr Halbleitertechnik, Aachen, West Germany
Abstract :
The idea of gate shaping in f.e.t.s was implemented into the GaAs-m.e.s.f.e.t. structure. A m.e.s.f.e.t. with 2 ¿m gate length was fabricated, the measured m.a.g. data of which allow an extrapolation to an fmax of about 45 GHz.
Keywords :
field effect transistors; 45 GHz; GaAs MESFET; V-shaped gate;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19750122
