DocumentCode :
927379
Title :
A 3-D sidewall flash EPROM cell and memory array
Author :
Pein, Howard ; Plummer, James D.
Author_Institution :
Philips Lab., Briarcliff Manor, NY, USA
Volume :
14
Issue :
8
fYear :
1993
Firstpage :
415
Lastpage :
417
Abstract :
A new 3-D sidewall flash EPROM cell has been implemented in a novel memory array. The sidewall cell is a single-transistor stacked gate cell built on the sidewalls of a silicon pillar. The gates surround the pillar and current flows vertically from top to bottom of the pillar. The cell size approaches the square of the minimum pitch and is less than 40% of that of the conventional NOR-type structure. The cell and array architecture promise to be highly scalable.<>
Keywords :
EPROM; integrated memory circuits; 3D cell; Si pillar; array architecture; memory array; sidewall flash EPROM cell; single-transistor stacked gate cell; Dielectrics; EPROM; Etching; Laboratories; Nonvolatile memory; Silicon; Wire;
fLanguage :
English
Journal_Title :
Electron Device Letters, IEEE
Publisher :
ieee
ISSN :
0741-3106
Type :
jour
DOI :
10.1109/55.225597
Filename :
225597
Link To Document :
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