• DocumentCode
    927379
  • Title

    A 3-D sidewall flash EPROM cell and memory array

  • Author

    Pein, Howard ; Plummer, James D.

  • Author_Institution
    Philips Lab., Briarcliff Manor, NY, USA
  • Volume
    14
  • Issue
    8
  • fYear
    1993
  • Firstpage
    415
  • Lastpage
    417
  • Abstract
    A new 3-D sidewall flash EPROM cell has been implemented in a novel memory array. The sidewall cell is a single-transistor stacked gate cell built on the sidewalls of a silicon pillar. The gates surround the pillar and current flows vertically from top to bottom of the pillar. The cell size approaches the square of the minimum pitch and is less than 40% of that of the conventional NOR-type structure. The cell and array architecture promise to be highly scalable.<>
  • Keywords
    EPROM; integrated memory circuits; 3D cell; Si pillar; array architecture; memory array; sidewall flash EPROM cell; single-transistor stacked gate cell; Dielectrics; EPROM; Etching; Laboratories; Nonvolatile memory; Silicon; Wire;
  • fLanguage
    English
  • Journal_Title
    Electron Device Letters, IEEE
  • Publisher
    ieee
  • ISSN
    0741-3106
  • Type

    jour

  • DOI
    10.1109/55.225597
  • Filename
    225597