DocumentCode
927379
Title
A 3-D sidewall flash EPROM cell and memory array
Author
Pein, Howard ; Plummer, James D.
Author_Institution
Philips Lab., Briarcliff Manor, NY, USA
Volume
14
Issue
8
fYear
1993
Firstpage
415
Lastpage
417
Abstract
A new 3-D sidewall flash EPROM cell has been implemented in a novel memory array. The sidewall cell is a single-transistor stacked gate cell built on the sidewalls of a silicon pillar. The gates surround the pillar and current flows vertically from top to bottom of the pillar. The cell size approaches the square of the minimum pitch and is less than 40% of that of the conventional NOR-type structure. The cell and array architecture promise to be highly scalable.<>
Keywords
EPROM; integrated memory circuits; 3D cell; Si pillar; array architecture; memory array; sidewall flash EPROM cell; single-transistor stacked gate cell; Dielectrics; EPROM; Etching; Laboratories; Nonvolatile memory; Silicon; Wire;
fLanguage
English
Journal_Title
Electron Device Letters, IEEE
Publisher
ieee
ISSN
0741-3106
Type
jour
DOI
10.1109/55.225597
Filename
225597
Link To Document