DocumentCode
927461
Title
High-speed 1 μm GaAs m.e.s.f.e.t.
Author
Kohn, Erhard ; W¿¿ller, R. ; Stahlmann, R. ; Beneking, H.
Author_Institution
RWTH Aachen, Institut fÿr Halbleitertechnik, Aachen, West Germany
Volume
11
Issue
8
fYear
1975
Firstpage
171
Lastpage
172
Abstract
By minimising parasitic series resistances, a GaAs m.e.s.f.e.t. with 1 μm gate length was fabricated, possessing the highest known r.f. power gain, measured up to 18 GHz, for GaAs m.e.s.f.e.t.s.
Keywords
field effect transistors; solid-state microwave devices; 1 micron gate length; 18 GHz; RF power gain; high speed GaAs MESFET; microwave; parasitic series resistances;
fLanguage
English
Journal_Title
Electronics Letters
Publisher
iet
ISSN
0013-5194
Type
jour
DOI
10.1049/el:19750131
Filename
4236644
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