Title :
Effect of chromium thickness on AuCr--nSi Schottky and AuCr--n--p+ Si BARITT diodes
Author :
Narain, J. ; Borrego, J.M. ; Gutmann, R.J.
Author_Institution :
Rensselaer Polytechnic Institute, Electrical & Systems Engineering Department, Troy, USA
Abstract :
The effect of chromium thickness on the barrier height of AuCr--nSi Schottky diodes and the current/voltage characteristics of AuCr--n--p+Si BARITT diodes is reported. The barrier height varies from 0.81 to 0.59 eV as the chromium thickness increases from zero (no chromium) to more than 200Å
Keywords :
Schottky-barrier diodes; avalanche diodes; metallisation; semiconductor-metal boundaries; transit time devices; AuCr-n-p+Si BARITT diodes; AuCr-nSi Schottky diodes; barrier height;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19750136
