Title :
High-efficiency p--n junction GaAs IMPATT devices
Author :
Rosztoczy, F.E. ; Long, S.I. ; Goldwasser, R.E. ; Kinoshita, J.
Author_Institution :
Varian Associates, Palo Alto, USA
Abstract :
GaAs IMPATT devices using p+--n and p--n junctions with hi--lo and lo--hi--lo structures were investigated. A maximum efficiency of 26.8% and a maximum peak power of 12.8 W with 25% efficiency have been observed in the X band. A median life of 107 h is predicted for a 237°C junction temperature.
Keywords :
IMPATT diodes; solid-state microwave devices; Pt Schottky barrier; X-band; efficiency; maximum peak power; median life; p-n junction GaAs IMPATT devices; temperature;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19750137
