Title :
Tunnel transistor
Author_Institution :
Fujitsu Limited, Kobe, Japan
fDate :
7/1/1973 12:00:00 AM
Abstract :
A tunnel transistor which can be easily obtained by the conventional silicon planar technology will be proposed. It promises fine control of electrical characteristics and high yield. The yield per one wafer in the wafer checking has amounted to 100 percent.
Keywords :
Convolvers; Electric variables; Electrodes; Electron emission; Insulation; Metal-insulator structures; Semiconductor devices; Silicon; Tunneling; Voltage;
Journal_Title :
Proceedings of the IEEE
DOI :
10.1109/PROC.1973.9205
