DocumentCode
927672
Title
Integrated GaAs f.e.t. mixer performance at X band
Author
Pucel, R.A. ; Masse, D. ; Bera, Rajesh
Author_Institution
Raytheon Company, Research Division, Waltham, USA
Volume
11
Issue
9
fYear
1975
Firstpage
199
Lastpage
200
Abstract
Experiments were performed at X band with GaAs f.e.t.s used as mixer elements. These studies show that an f.e.t. mixer may exhibit a conversion gain approaching that of the corresponding amplifier. Conversion gains as high as 6 dB were measured. Low noise and high signal-handling capabilities were also demonstrated.
Keywords
field effect transistors; hybrid integrated circuits; mixers (circuits); solid-state microwave circuits; MIC; X-band; amplifier; conversion gain; integrated FET´s; mixer elements;
fLanguage
English
Journal_Title
Electronics Letters
Publisher
iet
ISSN
0013-5194
Type
jour
DOI
10.1049/el:19750152
Filename
4236666
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