Title :
Fabrication of 3-terminal transferred-electron logic devices by proton bombardment for device isolation
Author :
Upadhyayula, L.C. ; Narayan, S.Y. ; Douglas, E.C.
Author_Institution :
RCA Laboratories, David Sarnoff Research Center, Princeton, USA
Abstract :
Proton bombardment has been used to convert n GaAs into high-resistivity material. This technique is used for isolating coplanar transferred-electron logic (t.e.l.) devices. The d.c. transfer characteristics of these devices show about 20% current drop. Preliminary experiments indicate that the device propagation delay is of the order of 50 ps.
Keywords :
III-V semiconductors; gallium arsenide; logic devices; proton effects; semiconductor device manufacture; transferred electron devices; device isolation; n-GaAs; propagation delay; proton bombardment; three terminal transferred electron logic devices; transfer characteristics;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19750153
