Broadband integrated millimeter-wave up- and down-converter GaAs MMICs

Author

Mahon, Simon J. ; Convert, Emmanuelle ; Beasly, Paul T. ; Bessemoulin, Alexandre ; Dadello, Anna ; Costantini, Alberto ; Fattorini, Anthony ; McCulloch, MacCrae G. ; Lawrence, Bernard G. ; Harvey, James T.

Author_Institution

Mimix Broadband, Sydney, NSW, Australia

Volume

54

Issue

5

fYear

2006

fDate

5/1/2006 12:00:00 AM

Firstpage

2050

Lastpage

2060

Abstract

The architecture and design of broadband, highly integrated up- and down-converters in GaAs pHEMT technology is described. Two up-converters and two down-converters have been designed to reduce the complexity and cost of broadband millimeter-wave systems by integrating a number of functions into compact MMICs. Broadband performance was achieved for approximately 17-35GHz (low band) and 30-45 GHz (high band) with up-conversion input-referred,third-order intercept point exceeding 12 and 10 dBm, respectively, with good 2Ã— local oscillator leakage and excellent gain control. To the best of the authors´ knowledge,this is the highest level of integration achieved for up- and down-converters at these frequencies.

Keywords

MMIC; convertors; gallium arsenide; high electron mobility transistors; 17 to 45 GHz; GaAs; broadband integrated millimeter wave down-converter MMIC; broadband integrated millimeter wave up-converter MMIC; high electron-mobility transistors; monolithic microwave integrated circuits; third-order intercept point; Cost function; Frequency; Gallium arsenide; High power amplifiers; Linearity; Local oscillators; Low-noise amplifiers; MMICs; Millimeter wave technology; Millimeter wave transistors; High electron-mobility transistors (HEMTs); monolithic microwave integrated circuits (MMICs); receivers; transmitters;

fLanguage

English

Journal_Title

Microwave Theory and Techniques, IEEE Transactions on

Publisher

ieee

ISSN

0018-9480

Type

jour

DOI

10.1109/TMTT.2006.872793

Filename

1629047