Title :
Transistor Forming Effects in n-Type Germanium
Author_Institution :
Bell Telephone Laboratories, Murray Hill Laboratory, Murray Hill, N.J.
fDate :
4/1/1952 12:00:00 AM
Abstract :
Some of the effects of electrical forming of the collector of an n-type germanium transistor are discussed. Evidence is presented for the existence of a region of p-type germanium underneath the formed electrode, together with some indication of the size of the formed region. These experiments lend support to the p-n hook mechanism in that they explain the observed high values of alpha in transistors. This relation is discussed.
Keywords :
Electrodes; Energy states; Etching; Germanium; Grain boundaries; Laboratories; Micromanipulators; Probes; Rectifiers; Surface resistance;
Journal_Title :
Proceedings of the IRE
DOI :
10.1109/JRPROC.1952.274038
