DocumentCode
927831
Title
Experiments on integrated gallium-arsenide f.e.t. oscillators at X band
Author
Pucel, R.A. ; Bera, R. ; Masse, D.
Author_Institution
Raytheon Company, Research Division, Waltham, USA
Volume
11
Issue
10
fYear
1975
Firstpage
219
Lastpage
220
Abstract
Experimental results obtained with GaAs f.e.t. oscillators at X band are described. It is demonstrated that the output power of f.e.t. oscillators is sufficient to drive X band mixers. The noise measure of these oscillators is competitive with Gunn devices, and can be reduced further.
Keywords
field effect transistors; hybrid integrated circuits; microwave oscillators; solid-state microwave circuits; MIC, GaAs FET oscillators; X-band; mixers; noise measure;
fLanguage
English
Journal_Title
Electronics Letters
Publisher
iet
ISSN
0013-5194
Type
jour
DOI
10.1049/el:19750167
Filename
4236682
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