DocumentCode :
927833
Title :
Low light level imaging with buried channel charge-coupled devices
Author :
Kim, Choong-Ki ; Dyck, Rudolph H.
Author_Institution :
Fairchild Camera and Instrument Corporation, Palo Alto, Calif.
Volume :
61
Issue :
8
fYear :
1973
Firstpage :
1146
Lastpage :
1147
Abstract :
In a buried-channel charge-coupled device (CCD), trapping effects at the interface states can be eliminated and high transfer efficiencies are thus obtained for a wide range of signal levels. Also, the noise associated with the interface states is eliminated. Therefore, good imaging can be achieved for light exposure levels several orders of magnitude smaller than the saturation level of the device. Experimental results obtained from a 500-element linear imaging device are described showing the potential of the device as a low light level imaging array.
Keywords :
Charge coupled devices; Circuit noise; Clocks; Differential amplifiers; Interface states; Noise reduction; Sensor arrays; Shift registers; Silicon; Tungsten;
fLanguage :
English
Journal_Title :
Proceedings of the IEEE
Publisher :
ieee
ISSN :
0018-9219
Type :
jour
DOI :
10.1109/PROC.1973.9222
Filename :
1451152
Link To Document :
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