• DocumentCode
    927868
  • Title

    Direct observation of the depletion layer in a multichannel vertical j.f.e.t. (m.j.f.e.t.)

  • Author

    Ogawa, Hisahito ; Abe, Atsushi ; Nakajima, Tatsunori ; Kajiwara, Takao

  • Author_Institution
    Matsushita Electric Industrial Co. Ltd., Central Research Laboratories, Kadoma, Japan
  • Volume
    11
  • Issue
    10
  • fYear
    1975
  • Firstpage
    223
  • Lastpage
    225
  • Abstract
    The letter reports direct observations of the spreading behaviour of the depletion layer into the channel region of the m.j.f.e.t. by scanning electron microscopy. The results are discussed in connection with electrical characteristics. A mechanism for the triode-like operation is also clarified by the concept of a potential profile.
  • Keywords
    field effect transistors; MJFET; SEM; channel region; depletion layer; multichannel vertical JFET; potential profile;
  • fLanguage
    English
  • Journal_Title
    Electronics Letters
  • Publisher
    iet
  • ISSN
    0013-5194
  • Type

    jour

  • DOI
    10.1049/el:19750170
  • Filename
    4236685