DocumentCode :
927868
Title :
Direct observation of the depletion layer in a multichannel vertical j.f.e.t. (m.j.f.e.t.)
Author :
Ogawa, Hisahito ; Abe, Atsushi ; Nakajima, Tatsunori ; Kajiwara, Takao
Author_Institution :
Matsushita Electric Industrial Co. Ltd., Central Research Laboratories, Kadoma, Japan
Volume :
11
Issue :
10
fYear :
1975
Firstpage :
223
Lastpage :
225
Abstract :
The letter reports direct observations of the spreading behaviour of the depletion layer into the channel region of the m.j.f.e.t. by scanning electron microscopy. The results are discussed in connection with electrical characteristics. A mechanism for the triode-like operation is also clarified by the concept of a potential profile.
Keywords :
field effect transistors; MJFET; SEM; channel region; depletion layer; multichannel vertical JFET; potential profile;
fLanguage :
English
Journal_Title :
Electronics Letters
Publisher :
iet
ISSN :
0013-5194
Type :
jour
DOI :
10.1049/el:19750170
Filename :
4236685
Link To Document :
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