Title :
Direct observation of the depletion layer in a multichannel vertical j.f.e.t. (m.j.f.e.t.)
Author :
Ogawa, Hisahito ; Abe, Atsushi ; Nakajima, Tatsunori ; Kajiwara, Takao
Author_Institution :
Matsushita Electric Industrial Co. Ltd., Central Research Laboratories, Kadoma, Japan
Abstract :
The letter reports direct observations of the spreading behaviour of the depletion layer into the channel region of the m.j.f.e.t. by scanning electron microscopy. The results are discussed in connection with electrical characteristics. A mechanism for the triode-like operation is also clarified by the concept of a potential profile.
Keywords :
field effect transistors; MJFET; SEM; channel region; depletion layer; multichannel vertical JFET; potential profile;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19750170