• DocumentCode
    927902
  • Title

    Addendum to "Design of Microwave GaAs MESFET\´s for Broad-Band Low-Noise Amplifiers"

  • Author

    Fukui, Hiroshi

  • Volume
    29
  • Issue
    10
  • fYear
    1981
  • fDate
    10/1/1981 12:00:00 AM
  • Firstpage
    1119
  • Lastpage
    1119
  • Abstract
    It has been called to the author´s attention that (3) in the above paper appears to be inadequate, especially for scaling.
  • Keywords
    Capacitance-voltage characteristics; Dielectric constant; Dielectric substrates; Gallium arsenide; Impedance; Low-noise amplifiers; MESFETs; Microstrip; Microwave FETs; Microwave theory and techniques;
  • fLanguage
    English
  • Journal_Title
    Microwave Theory and Techniques, IEEE Transactions on
  • Publisher
    ieee
  • ISSN
    0018-9480
  • Type

    jour

  • DOI
    10.1109/TMTT.1981.1130512
  • Filename
    1130512
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=927902