Technique for plotting nonequilibrium C/V curves of an m.o.s. capacitor

A technique for plotting the nonequilibrium capacitance/voltage curves of an m.o.s. capacitor is proposed. A gated amplifier makes it possible to plot these curves directly on an xy recorder. The method is especially suitable for determining the impurity profiles in silicon. Static high-frequency capacitance/voltage curves can also be obtained. Some experimental data are presented as an example.