Title :
High-efficiency TRAPATT operation in X band
Author :
Purcell, J.J. ; Weatherhead, M.R. ; Gordon, S.M.R. ; Oxley, C.H. ; Wickens, P.R.
Author_Institution :
Plessey Company Ltd., Allen Clark Research Centre, Towcester, UK
Abstract :
High-efficiency TRAPATT operation in X band has been obtained using a silicon p+¿n¿n+ structure with an integral-heatsink technology. 35.8% efficiency with 12.3 W output and 15 W at 30.6% efficiency have been obtained in the frequency range 8.4¿9.6 GHz. Precise doping-level control has enabled a high degree of reproducibility to be realised from slice to slice, and a well characterised processing technology results in high yields of efficient devices.
Keywords :
avalanche diodes; heat sinks; semiconductor device manufacture; solid-state microwave devices; transit time devices; X-band; high efficiency TRAPATT operation; integral heatsink technology; p+-n-n+ structure; precise doping level control;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19750179
