• DocumentCode
    927968
  • Title

    High-efficiency TRAPATT operation in X band

  • Author

    Purcell, J.J. ; Weatherhead, M.R. ; Gordon, S.M.R. ; Oxley, C.H. ; Wickens, P.R.

  • Author_Institution
    Plessey Company Ltd., Allen Clark Research Centre, Towcester, UK
  • Volume
    11
  • Issue
    11
  • fYear
    1975
  • Firstpage
    236
  • Lastpage
    238
  • Abstract
    High-efficiency TRAPATT operation in X band has been obtained using a silicon p+¿n¿n+ structure with an integral-heatsink technology. 35.8% efficiency with 12.3 W output and 15 W at 30.6% efficiency have been obtained in the frequency range 8.4¿9.6 GHz. Precise doping-level control has enabled a high degree of reproducibility to be realised from slice to slice, and a well characterised processing technology results in high yields of efficient devices.
  • Keywords
    avalanche diodes; heat sinks; semiconductor device manufacture; solid-state microwave devices; transit time devices; X-band; high efficiency TRAPATT operation; integral heatsink technology; p+-n-n+ structure; precise doping level control;
  • fLanguage
    English
  • Journal_Title
    Electronics Letters
  • Publisher
    iet
  • ISSN
    0013-5194
  • Type

    jour

  • DOI
    10.1049/el:19750179
  • Filename
    4236695
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=927968