Title :
Electrical and optical properties of Gen--SnO2 photodetectors
Author :
Manifacier, J.C. ; Gaillard, Sebastien ; Fillard, J.P.
Author_Institution :
Université des Sciences et Techniques du Languedoc, Centre d´Ã\x89tudes d´Electronique des Solides, Laboratoire associé au CNRS, Montpellier, France
Abstract :
A solid-state photodetector is proposed using an SnO2 transparent layer as a constitutive element in conjunction with a Gen substrate. Special attention is paid to the photo-conductive mode (reverse-biased diode). The electrical characteristics and optical spectral responsivity are reported, noise measurements show a typical contact effect and allow n.e.p. determination. From measured specifications, it appears that, in comparison with commercially available photodiodes, such a structure could be of interest.
Keywords :
elemental semiconductors; germanium; photodetectors; photodiodes; semiconductor device manufacture; tin compounds; SnO2 transparent layer; n-Ge substrate; optical spectral responsivity; photoconductive mode; photodetectors; reverse biased diode;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19750182
