Title :
Technical Memorandum Investigation of nonreciprocal Fin-Line devices
Author :
Tedjini, Smail ; Pic, E.
Author_Institution :
ENSERG, Institute National Polytechnique, Laboratoire d´Electromagnetisme et micro-ondes, Grenoble, France
fDate :
2/1/1984 12:00:00 AM
Abstract :
The paper describes a fin-line isolator using a semiconductor layer as an anisotropic media. The spectral-domain method has been extended to suit to our problem. The semiconductor layer is taken into account through its conductivity tensor. Two semiconductors, GaAs and InSb, have been considered in the calculations and experiments. The frequency range considered is the Ka-band (26¿¿40 GHz). It is pointed out that InSb is the best choice.
Keywords :
fin lines; microwave isolators; waveguide components; waveguide theory; GaAs; InSb; Ka-band; anisotropic media; conductivity tensor; fin-line isolator; nonreciprocal fin-line devices; semiconductor layer; spectral-domain method;
Journal_Title :
Microwaves, Optics and Antennas, IEE Proceedings H
DOI :
10.1049/ip-h-1.1984.0012