Analysis of sensitivity degradation caused by the flicker noise of GaAs-MESFETs in fiber-optic receivers

Author

Park, Min-Su ; Shim, C.-S. ; Kang, Min-Ho

Author_Institution

Electron. & Telecommun. Res. Inst., Chungnam, South Korea

Volume

6

Issue

5

fYear

1988

fDate

5/1/1988 12:00:00 AM

Firstpage

660

Lastpage

667

Abstract

The total input noise current and sensitivity of the fiber-optic receiver was calculated. The flicker noise source was included by adopting a pertinent flicker noise model. Power penalties caused by the flicker noise were calculated for various fiber-optic receivers using the calculated noise current. It has been found that the flicker noise affects the sensitivity over the whole range of the bit rates, and that the total input capacitance is an important parameter affecting the power penalty which is serious in the case of a high-impedance-type p-i-n FET receiver. The optimum feedback resistance for practical p-i-n FET receiver design is also suggested

Keywords

III-V semiconductors; fibre optics; field effect transistors; gallium arsenide; noise; receivers; GaAs; MESFET; feedback resistance; fiber-optic receivers; flicker noise; input capacitance; noise current; power penalty; practical p-i-n FET receiver design; semiconductors; sensitivity degradation; 1f noise; Bit rate; Capacitance; Circuit noise; Dark current; Degradation; FETs; Feedback; Optical feedback; Optical fiber LAN; Optical fiber communication; Optical noise; Optical receivers; PIN photodiodes; Photodiodes;

fLanguage

English

Journal_Title

Lightwave Technology, Journal of

Publisher

ieee

ISSN

0733-8724

Type

jour

DOI

10.1109/50.4051

Filename

4051