Title :
Complex distribution effects of thin component ohmic-contact layers on GaAs
Author :
Weiss, B.L. ; Hartnagel, H.L.
Author_Institution :
University of Newcastle upon Tyne, Department of Electrical & Electronic Engineering, Merz Laboratories, Newcastle upon Tyne, UK
Abstract :
A microprobe analysis of cleaved edges of GaAs samples containing the cross-section of ohmic contacts has shown that near the surface these contacts contain GaxIn1¿xAs, which is probably caused by its precipitation to single-crystal nucleation Sites produced at the surface of the metallisation.
Keywords :
III-V semiconductors; gallium arsenide; ohmic contacts; GaAs; GaxIn1-xAs; metallisation; microprobe analysis; precipitation; thin component ohmic contact layers;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19750199
