Low-noise characteristics of pulse-doped GaAs MESFETs with planar self-aligned gates

Author

Nakajima, Shigeru ; Otobe, Kenji ; Shiga, Nobuo ; Kuwata, Nobuhiro ; Matsuzaki, Ken-Ichiro ; Sekiguchi, Takeshi ; Hayashi, Hideki

Author_Institution

Sumitomo Electr. Ind. Ltd., Yokohama, Japan

Volume

39

Issue

4

fYear

1992

fDate

4/1/1992 12:00:00 AM

Firstpage

771

Lastpage

776

Abstract

The authors report on the low-noise characteristics of pulse-doped GaAs MESFETs. The pulse-doped structure consists of an undoped GaAs buffer layer, a highly doped thin GaAs active layer, and an undoped GaAs cap layer grown by organometallic vapor phase epitaxy. Even though the electron mobility of this structure is 1500 cm²/V-s, the noise figures obtained are 0.72 dB at 12 GHz and 1.15 dB at 18 GHz. In addition, the noise figures are insensitive to the drain current. It was found that the noise characteristics improve as the active layer of the pulse-doped MESFET becomes thinner. These mechanisms can explain the cancellation effect between the drain noise current and gate-induced noise current as reported for HEMTs

Keywords

III-V semiconductors; Schottky gate field effect transistors; electron device noise; gallium arsenide; heavily doped semiconductors; solid-state microwave devices; 0.72 dB; 1.15 dB; 12 GHz; 18 GHz; GaAs; GaAs-Si-GaAs; MESFETs; drain noise current; electron mobility; gate-induced noise current; highly doped active layer; low-noise characteristics; microwave device; noise figures; organometallic vapor phase epitaxy; planar self-aligned gates; pulse-doped structure; undoped cap layer; Active noise reduction; Buffer layers; Electron mobility; Epitaxial growth; Gallium arsenide; HEMTs; MESFETs; MODFETs; Noise cancellation; Noise figure;

fLanguage

English

Journal_Title

Electron Devices, IEEE Transactions on

Publisher

ieee

ISSN

0018-9383

Type

jour

DOI

10.1109/16.127464

Filename

127464