DocumentCode
928369
Title
Comparison of numerical-solution methods for 2-dimensional bipolar-transistor-analysis algorithm
Author
Jesshope, C.R. ; Zaluska, E.J. ; Kemhadjian, H.A.
Author_Institution
University of Southampton, Department of Electronics, Southampton, UK
Volume
11
Issue
14
fYear
1975
Firstpage
285
Lastpage
286
Abstract
Numerical methods of solution to linear equations are dicussed with reference to a bipolar-transistor model. Results are presented that show the advantages of using a strongly implicit procedure (s.i.p.). A new technique for applying iteration parametrers to s.i.p. is proposed. This method is compared with both direct and other iterative methods.
Keywords
bipolar transistors; computer-aided circuit analysis; iterative methods; linear differential equations; semiconductor device models; iteration parameters; iterative methods; linear equations; numerical solution methods; strongly implicit procedure; two dimensional bipolar transistor analysis algorithm;
fLanguage
English
Journal_Title
Electronics Letters
Publisher
iet
ISSN
0013-5194
Type
jour
DOI
10.1049/el:19750216
Filename
4236735
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