Title :
A simulation model for cathodoluminescence in the scanning electron microscope
Author :
Phang, Jacob C H ; Pey, Kin Leong ; Chan, Daniel S H
Author_Institution :
Dept. of Electr. Eng., Nat. Univ. of Singapore, Singapore
fDate :
4/1/1992 12:00:00 AM
Abstract :
An improved three-dimensional model for simulating cathodoluminescence (CL) in a semiconductor under electron-beam irradiation is described. The Monte Carlo method is used to simulate electron-beam-semiconductor interaction while F. Berz and H.K. Kuiken´s (1976) formulation is used to obtain the excess carrier distribution. Optical losses of photons both within the semiconductor and at the semiconductor-air interface are also accounted for in this model. This model has been used to simulate the CL intensity as a function of electron-beam voltage, beam incidence angle, surface recombination velocity, diffusion length, absorption coefficient, and surface dead-layer thickness. The radiation patterns over the top face of a specimen with flat geometry are also simulated
Keywords :
Monte Carlo methods; carrier lifetime; cathodoluminescence; luminescence of inorganic solids; scanning electron microscopy; semiconductors; Monte Carlo method; absorption coefficient; beam incidence angle; cathodoluminescence; diffusion length; electron-beam irradiation; electron-beam voltage; electron-beam-semiconductor interaction; excess carrier distribution; optical photon losses; radiation patterns; scanning electron microscope; semiconductor; semiconductor-air interface; simulation model; surface dead-layer thickness; surface recombination velocity; three-dimensional model; Absorption; Electron beams; Monte Carlo methods; Optical losses; Optical scattering; Radiative recombination; Scanning electron microscopy; Spontaneous emission; Surface treatment; Voltage;
Journal_Title :
Electron Devices, IEEE Transactions on
