M.I.C. TRAPATT oscillator for efficient S band operation

The letter describes the construction and performance of a S band m.i.c. TRAPATT oscillator. The design utilises a system of sliding lumped-element sections to provide optimum performance from unencapsulated silicon p+¿n¿n+ chips. Efficiencies of greater than 30% at 2.6 GHz and peak output powers up to 40 W are reported. The oscillator is small and self contained and is suitable for ai borne transmitters.