Title :
Dependence of t.e.o. efficiency on NL product
Author :
Ip, K.T. ; Eastman, L.F.
Author_Institution :
Cornell University, School of Electrical Engineering, Ithaca, USA
Abstract :
As the NL product is increased, an increase in efficiency of t.e.o. devices is observed. This effect is theoretically explained in terms of the induced current caused by the moving space charge in the active layer. A limit on current peak/valley ratio for various NL product devices is presented.
Keywords :
transferred electron devices; efficiency; electron density length product; induced current; moving space charge; transferred electron oscillator;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19750228
