DocumentCode
928505
Title
A lifetime limitation of high-field GaAs devices
Author
Hartnagel, H. ; Weiss, B.L.
Author_Institution
Univ. of Newcastle upon Tyne, UK
Volume
61
Issue
9
fYear
1973
Firstpage
1369
Lastpage
1370
Abstract
From considerations of the piezoelectric effect it is shown that dislocations are generated by high fields such as those produced by the traveling dipole domain in a Gunn diode. This eventually causes failure of the device. The effects of heat generated in the active layer are shown to aggravate this phenomenon.
Keywords
Conductors; Current density; Electric fields; Electromagnetic fields; Electron mobility; Equations; Gallium arsenide; Gunn devices; Kinetic theory; Load flow;
fLanguage
English
Journal_Title
Proceedings of the IEEE
Publisher
ieee
ISSN
0018-9219
Type
jour
DOI
10.1109/PROC.1973.9283
Filename
1451213
Link To Document