Title :
AuGe/Au ohmic contacts to n-type InP by hot-plate alloying
Author :
Binari, S.C. ; Boos, J. Brad
Author_Institution :
Naval Res. Lab., Washington, DC, USA
Abstract :
The authors report on the fabrication and characteristics of AuGe/Au ohmic contacts to ion-implanted n-type InP. The contacts have smooth surface morphology, excellent adhesion and good contact resistance uniformity. For samples with carrier concentrations of 1.7 * 1017 and 1.6 * 1018 cm-3, contact resistances of 0.07 and 0.03 Omega mm, respectively, have been obtained. These values are among the lowest contact resistances reported for n-type InP.
Keywords :
III-V semiconductors; adhesion; contact resistance; germanium alloys; gold; gold alloys; indium compounds; ion implantation; ohmic contacts; semiconductor-metal boundaries; AuGe-Au-InP; adhesion; carrier concentrations; contact resistance uniformity; fabrication; hot-plate alloying; ion-implanted semiconductor; n-type InP; ohmic contacts; surface morphology;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19890810
