• DocumentCode
    928513
  • Title

    AuGe/Au ohmic contacts to n-type InP by hot-plate alloying

  • Author

    Binari, S.C. ; Boos, J. Brad

  • Author_Institution
    Naval Res. Lab., Washington, DC, USA
  • Volume
    25
  • Issue
    18
  • fYear
    1989
  • Firstpage
    1207
  • Lastpage
    1209
  • Abstract
    The authors report on the fabrication and characteristics of AuGe/Au ohmic contacts to ion-implanted n-type InP. The contacts have smooth surface morphology, excellent adhesion and good contact resistance uniformity. For samples with carrier concentrations of 1.7 * 1017 and 1.6 * 1018 cm-3, contact resistances of 0.07 and 0.03 Omega mm, respectively, have been obtained. These values are among the lowest contact resistances reported for n-type InP.
  • Keywords
    III-V semiconductors; adhesion; contact resistance; germanium alloys; gold; gold alloys; indium compounds; ion implantation; ohmic contacts; semiconductor-metal boundaries; AuGe-Au-InP; adhesion; carrier concentrations; contact resistance uniformity; fabrication; hot-plate alloying; ion-implanted semiconductor; n-type InP; ohmic contacts; surface morphology;
  • fLanguage
    English
  • Journal_Title
    Electronics Letters
  • Publisher
    iet
  • ISSN
    0013-5194
  • Type

    jour

  • DOI
    10.1049/el:19890810
  • Filename
    43474
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=928513