Title :
AlGaAs/GaAs emitter-down HBT fabricated by MBE overgrowth
Author :
Shih, H.D. ; Morris, F.J.
Abstract :
A planar emitter-down AlGaAs/GaAs heterojunction bipolar transistor (HBT) has been fabricated by a molecular beam epitaxy overgrowth of the n-GaAs collector on top of the base layer after the base layer was formed by beryllium implantation and rapid thermal annealing. The emitter down transistors fabricated by this process had DC current gains of 20, and ring oscillators gave a maximum switching speed of 250 ps/gate.
Keywords :
III-V semiconductors; aluminium compounds; annealing; gallium arsenide; heterojunction bipolar transistors; ion implantation; molecular beam epitaxial growth; semiconductor doping; 250 ps; AlGaAs-GaAs:Be; Be implantation; DC current gains; III-V semiconductors; MBE overgrowth; RTA; emitter-down HBT; heterojunction bipolar transistor; maximum switching speed; molecular beam epitaxy; n-GaAs collector; rapid thermal annealing; ring oscillators;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19890812
