Title :
Improvement of optical nonlinear response in GaAs/AlGaAs nipi-MOW structure with Au ohmic contact
Author :
Ando, Hideki ; Oohashi, Hiromi ; Iwamura, Hideyuki ; Kanbe, H.
Author_Institution :
NTT Basic Res. Labs., Tokyo, Japan
Abstract :
Experiments demonstrate that the optical nonlinear response in a GaAs/AlGaAs nipi-MQW structure can be improved by introducing ohmic contacts, which electrically connect n- and p-layers. The response time is reduced by more than two orders of magnitude because of the enhanced recombination rate of photoexcited carriers, whereas the figure of merit for absorptive nonlinearity sigma eh is kept constant and is an order of magnitude larger than that in a conventional GaAs/AlGaAs MQW structure.
Keywords :
III-V semiconductors; aluminium compounds; carrier lifetime; electron-hole recombination; frequency response; gallium arsenide; gold; integrated optoelectronics; nonlinear optics; ohmic contacts; semiconductor quantum wells; semiconductor-metal boundaries; Au ohmic contact; GaAs-AlGaAs-Au; III-V semiconductors; absorptive nonlinearity; integrated optoelectronics; multiple quantum well; n-i-p-i MQW structure; nonlinear optics; optical nonlinear response; optoelectronics; photoexcited carriers; recombination rate;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19890813
