Characteristics of field-induced-drain (FID) poly-Si TFTs with high on/off current ratio

Author

Tanaka, Keiji ; Nakazawa, Kenji ; Suyama, Shiro ; Kato, Kinya

Author_Institution

NTT Interdisciplinary Res. Lab., Tokyo, Japan

Volume

39

Issue

4

fYear

1992

fDate

4/1/1992 12:00:00 AM

Firstpage

916

Lastpage

920

Abstract

The characteristics of polycrystalline silicon thin-film transistors (poly-Si TFTs) with a field-induction-drain (FID) structure using an inversion layer as a drain are investigated. The FID structure not only reduces the anomalous leakage current, but also maintains a high on current. An off current of 1.5 pA/μm and an on/off current ratio of 10⁷ (V_d=10, V_g=-20 V) are successfully obtained. These characteristics result from good junction characteristics between the p channel and n⁺ inversion layer. Reducing the threshold voltage of the FID region allows a simple circuit configuration for the FID TFTs

Keywords

elemental semiconductors; inversion layers; leakage currents; silicon; thin film transistors; FID structure; Si; anomalous leakage current; circuit configuration; field induction drain structure; high on/off current ratio; inversion layer; off current; on current; polysilicon TFT; threshold voltage; Active matrix technology; Circuits; Insulation; Leakage current; Liquid crystal displays; Maintenance; Semiconductor films; Silicon; Thin film transistors; Voltage;

fLanguage

English

Journal_Title

Electron Devices, IEEE Transactions on

Publisher

ieee

ISSN

0018-9383

Type

jour

DOI

10.1109/16.127483

Filename

127483