Title :
An analytical delayed-turn-off model for buried-channel PMOS devices operating at 77 K
Author :
Sim, Jai-hoon ; Kuo, James B.
Author_Institution :
Dept. of Electr. Eng., Nat. Taiwan Univ., Taipei, Taiwan
fDate :
4/1/1992 12:00:00 AM
Abstract :
A closed-formed analytical PMOS delayed-turn-off model suitable for simulation of circuits with buried-channel PMOS devices operating in the delayed-turn-off region at liquid-nitrogen temperature is presented. As verified by low-temperature PISCES results, the closed-form analytical PMOS delayed-turn-off model provides a much better accuracy for simulation of circuits operating at 77 K
Keywords :
MOS integrated circuits; electronic engineering computing; insulated gate field effect transistors; semiconductor device models; 77 K; PISCES; analytical delayed-turn-off model; buried-channel PMOS devices; circuit simulation; closed-form model; low-temperature; Analog circuits; Analytical models; Circuit simulation; Delay; Energy states; MOS devices; SPICE; Semiconductor device modeling; Temperature; Voltage;
Journal_Title :
Electron Devices, IEEE Transactions on
