• DocumentCode
    928595
  • Title

    Effect of dual implants into GaAs

  • Author

    Ambridge, T. ; Heckingbottom, R. ; Bell, E.C. ; Sealy, B.J. ; Stephens, K.G. ; Surridge, R.K.

  • Author_Institution
    Post Office, Research Department, London, UK
  • Volume
    11
  • Issue
    15
  • fYear
    1975
  • Firstpage
    314
  • Lastpage
    315
  • Abstract
    Enhanced donor activities have been obtained after annealing at 700°C for selenium implants into GaAs by implanting an equal dose of gallium together with the selenium. Donor concentration depth profiles, measured for both single and dual implants of 1×1013/cm2 and 2×1014/cm2 indicated that the increase in activity was mainly due to an increase in peak donor concentration for the dual implants compared with those measured for single implants.
  • Keywords
    III-V semiconductors; gallium arsenide; ion implantation; semiconductor doping; GaAs; Se implants; annealing; donor activities; donor concentration depth profiles; dual implants;
  • fLanguage
    English
  • Journal_Title
    Electronics Letters
  • Publisher
    iet
  • ISSN
    0013-5194
  • Type

    jour

  • DOI
    10.1049/el:19750241
  • Filename
    4236761
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=928595