Title :
Thermal CVD of homoepitaxial diamond using CF4 and F2
Author :
Posthill, J.B. ; Markunas, R.J.
Abstract :
For the first time, diamond has been grown using low-pressure thermal CVD. No additional excitation such as plasmas or filaments was used. The authors report the homoepitaxial growth of diamond on type II-A diamond
Keywords :
diamond; elemental semiconductors; semiconductor epitaxial layers; semiconductor growth; semiconductor thin films; vapour phase epitaxial growth; AES; Auger electron spectroscopy; CF 4/F 2 gas mixture; F 2; SEM; homoepitaxial diamond; low-pressure thermal CVD; pyrolysis; type II-A diamond;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19890818
