• DocumentCode
    928606
  • Title

    Thermal CVD of homoepitaxial diamond using CF4 and F2

  • Author

    Posthill, J.B. ; Markunas, R.J.

  • Volume
    25
  • Issue
    18
  • fYear
    1989
  • Firstpage
    1220
  • Lastpage
    1221
  • Abstract
    For the first time, diamond has been grown using low-pressure thermal CVD. No additional excitation such as plasmas or filaments was used. The authors report the homoepitaxial growth of diamond on type II-A diamond
  • Keywords
    diamond; elemental semiconductors; semiconductor epitaxial layers; semiconductor growth; semiconductor thin films; vapour phase epitaxial growth; AES; Auger electron spectroscopy; CF 4/F 2 gas mixture; F 2; SEM; homoepitaxial diamond; low-pressure thermal CVD; pyrolysis; type II-A diamond;
  • fLanguage
    English
  • Journal_Title
    Electronics Letters
  • Publisher
    iet
  • ISSN
    0013-5194
  • Type

    jour

  • DOI
    10.1049/el:19890818
  • Filename
    43482
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=928606