Title :
Critical thickness in strained-layer GaInAs/GaAs quantum well lasers
Author :
Shieh, C. ; Lee, Hongseok ; Mantz, J. ; Ackley, D. ; Engelmann, R.
Author_Institution :
Siemens Corp. Res. Inc., Princeton, NJ, USA
Abstract :
The critical thickness in strained-layer GaInAs/GaAs quantum well lasers was studied by measuring the dependence of the threshold current on the number of quantum wells. The critical thickness for 20% In composition was found to be around 30 nm, which is twice as large as predicted by the Matthews-Blakeslee model.
Keywords :
III-V semiconductors; annealing; gallium arsenide; indium compounds; molecular beam epitaxial growth; semiconductor junction lasers; GaInAs-GaAs; In composition; MBE growth; annealing; critical thickness; quantum well lasers; semiconductor lasers; strained-layer; threshold current;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19890822
