DocumentCode
928693
Title
Millimeter-Wave Device Technology
Author
Rosen, Arye ; Caulton, Martin ; Stabile, Paul ; Gombar, Anna M. ; Janton, Walter M. ; Wu, Chung P. ; Corboy, John F. ; Magee, Charles W.
Volume
30
Issue
1
fYear
1982
Firstpage
47
Lastpage
55
Abstract
We have investigated novel techniques for the fabrication of silicon IMPATT diodes for use at frequencies of 220 GHz and beyond. We report on diodes yielding 25 mW CW at 102 GHz with 2-percent conversion efficiency, and 16 mW CW at 132 GHz with 1-percent conversion efficiency. The basic techniques described are ion implantation, laser annealing, unique secondary-ion mass spectrometry (SIMS) profile diagnostics, and novel wafer thinning, yielding ultrathin, reproducible wafers. The utilization of these technologies, as they are further refined, can result in the development of silicon monolithic integrated sources.
Keywords
Annealing; Diodes; Frequency; Impurities; Ion implantation; Millimeter wave devices; Nonhomogeneous media; Optical device fabrication; Silicon; Substrates;
fLanguage
English
Journal_Title
Microwave Theory and Techniques, IEEE Transactions on
Publisher
ieee
ISSN
0018-9480
Type
jour
DOI
10.1109/TMTT.1982.1131016
Filename
1131016
Link To Document